Breakdown Enhancement Voltage of Algan/Gan Hemts with Schottky and OHMIC Drain Contacts

نویسنده

  • R. Gayathri
چکیده

In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The breakdown voltage increase of Schottky drain contacts provides low leakage current at drain source reverse bias. In this paper reports the temperature dependent electrical parameter of Schottky drain contact. The Schottky drain contacts were characterized by better temperature stability of the specific on resistance.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors Citation

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a threeterminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed ...

متن کامل

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate Citation

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...

متن کامل

Process Variations to Normally-off GaN HEMTs on Si with p-GaN Cap Layer

Effects of process flows and device structures on the electrical properties of enhancement mode high electron mobility transistors (HEMTs) are investigated in this work. Except the demonstration of high threshold voltage (Vth) of 4.3V, the process window of the p-GaN residual thickness to ensure a steady operation current was estimated to be 10±5nm in our case. However, to achieve a high breakd...

متن کامل

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage

Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 μm-long gate exhibits a threshold voltage of 0.9 V, a kneevoltage of 2.2 V, a maximum drain current density of 310 mA/mm, a pe...

متن کامل

Numerical analysis of impact of stress in passivation films on electrical properties in AlGaN/GaN heterostructures

The impact of forces due to the difference in mechanical stresses between the Schottky contacts and passivation films on the electrical properties of (0001) AlGaN/GaN Schottky diodes is numerically analyzed in the framework of the edge force model. The compressive (tensile) passivation films induce negative (positive) piezoelectric charges below the Schottky contacts in the GaN channels and bri...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2016