Breakdown Enhancement Voltage of Algan/Gan Hemts with Schottky and OHMIC Drain Contacts
نویسنده
چکیده
In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The breakdown voltage increase of Schottky drain contacts provides low leakage current at drain source reverse bias. In this paper reports the temperature dependent electrical parameter of Schottky drain contact. The Schottky drain contacts were characterized by better temperature stability of the specific on resistance.
منابع مشابه
Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors Citation
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a threeterminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed ...
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